Formation of dislocation defects in the process of burying of InAs quantum dots into GaAs |
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| Authors: | N A Bert A L Kolesnikova V N Nevedomsky V V Preobrazhenskii M A Putyato A E Romanov V M Seleznev B R Semyagin and V V Chaldyshev |
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| Affiliation: | (1) Department of Physics & Astrophysics, University of Delhi, Delhi, 110007, India;(2) Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi, 110054, India; |
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| Abstract: | Evidence given by electron microscopy of dislocation relaxation of stresses near InAs quantum dots buried into GaAs is presented.
It was found that dislocation defects not emerging to the film surface are formed in some buried quantum dots. This suggests
that stress relaxation occurs in the buried state of the quantum dot, rather than at the stage of the formation and growth
of an InAs island on the GaAs surface. Models of internal dislocation relaxation of buried quantum dots are presented. |
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