N-type Schottky barrier source/drain MOSFET using ytterbium silicide

Ytterbium silicide, for the first time, was used to form the Schottky barrier source/drain (S/D) of N-channel MOSFETs. The device fabrication was performed at low temperature, which is highly preferred in the establishment of Schottky barrier S/D transistor (SSDT) technology, including the HfO/sub 2/ gate dielectric, and HaN/TaN metal gate. The YbSi/sub 2 - x/ silicided N-SSDT has demonstrated a very promising characteristic with a recorded high I/sub on//l/sub off/ ratio of /spl sim/10/sup 7/ and a steep subthreshold slope of 75 mV/dec, which is attributed to the lower electron barrier height and better film morphology of the YbSi/sub 2 - x//Si contact compared with other self-aligned rare earth metal-(Erbium, Terbium, Dysprosium) silicided Schottky junctions.