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单晶硅上电沉积Ni-W-P合金薄膜
引用本文:李爱昌,张国庆,张允什.单晶硅上电沉积Ni-W-P合金薄膜[J].过程工程学报,1997(4).
作者姓名:李爱昌  张国庆  张允什
作者单位:南开大学新能源材料化学研究所
摘    要:在单晶硅上电沉积制备出了具有不同组成和结构的Ni-W-P合金薄膜;研究了镀液组成、温度、pH值和电流密度等因素对镀层组成的影响;用X射线衍射法分析了薄膜的结构结果表明,提高温度有利于钨的沉积,降低pH值有利于高磷薄膜的形成;随着合金中钨、磷含量的增加,晶粒尺寸逐渐减小,薄膜由晶态变为非晶态结构

关 键 词:单晶硅,非晶,电沉积,Ni-W-P合金

ELECTRODEPOSITION OF NICKEL- TUNGSTEN-PHOSPHORUS ALLOY FILM ON MONOCRYSTALLINE SILICON
LI Aichang ZHANG Guoqing,ZHANG Yunshi.ELECTRODEPOSITION OF NICKEL- TUNGSTEN-PHOSPHORUS ALLOY FILM ON MONOCRYSTALLINE SILICON[J].Chinese Journal of Process Engineering,1997(4).
Authors:LI Aichang ZHANG Guoqing  ZHANG Yunshi
Abstract:Electrodeposition technology for nickel tungsten phosphorus alloy film on manocrystalline silicon was reported in the present paper Alloy film with different composition and different structure were prepared The effect of temperature,pH value,cathodic current density and concentration of sodium tungstate in the bath on the composition of deposit was investigated in detail X ray diffraction was used to determine the film stru cture Experimental results show that high temperature is favorable to the enhancement of W deposition and a low pH value is favorable to high P content As the content of W and P is increased,the average size of grains in the film becomes smaller,and the film approaches an amorphous structure
Keywords:Monocrystalline silicon  Amorphous material  Electrodeposition  Ni-W-P alloy  
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