纳米晶浮栅存储器的模拟、制备和电学特性

介绍了在纳米晶浮栅存储器数据保持特性方面的研究工作,重点介绍了纳米晶材料的选择与制备和遂穿介质层工程。研究证明,金属纳米晶浮栅存储器比半导体纳米晶浮栅存储器具有更好的电荷保持特性。并且金属纳米晶制备方法简单,通过电子束蒸发热退火的方法就能够得到质量较好的金属纳米晶,密度约4×1011cm-2,纳米晶尺寸约6～7nm。实验证明,高介电常数隧穿介质能够明显改善浮栅存储器的电荷保持特性,所以在引入金属纳米晶和高介电常数遂穿介质之后,纳米晶浮栅存储器可能成为下一代非挥发性存储器的候选者。

Simulation,Fabrication and Electrical Characteristics of Nanocrystal Floating Gate Memories

The data retention performances of nanocrystal floating gate memories were introduced.The nanocrystal selection,fabrication and tunneling barrier engineering were emphatically discussed.It is proved that metal nanocrystal floating gate memories have better retention performances than semiconductor nanocrystal floating gate memories.Fabrication of the metal nanocrystal is simple,and the better metal nanocrystal is gained by the electron beam evaporation and the post-thermal annealing,the dendity is about 4×1011 cm-2,the nanocrstal size is about 6-7 nm.The experiment proves that high-k tunneling dielectric can improve the retention performance of the floating gate memory.It is found that non-volatile memories utilizing nanocrystals show promising characteristics as a candidate for the next generation memories,especially when metal nanocrystals and high-k tunneling dielectrics are adopted.