Monitoring hot-electron-induced degradation of floating-body SOIMOSFETs |
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Authors: | Choi J-Y Sundaresan R Fossum JG |
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Affiliation: | Texas Instrum. Inc., Dallas, TX; |
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Abstract: | A simple model relating the hot-electron-controlled device lifetime of floating-body SOI MOSFETs to the body voltage is discussed. The model is derived from the familiar relationship between the device lifetime and the substrate current of bulk MOSFETs, a relationship that cannot be measured directly in floating-body MOSFETs. The model, which allows quick estimation of the device lifetime from body-voltage measurements, is supported by measurements of hot-electron-induced degradation of floating-body SOI MOSFETs fabricated using SIMOX substrates |
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