| 硅表面溅射氮氧铝膜的实验研究 |
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| 引用本文： | 王德煌,郭良. 硅表面溅射氮氧铝膜的实验研究[J]. 半导体学报, 1990, 11(10): 804-807 |
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| 作者姓名： | 王德煌 郭良 |
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| 作者单位： | 北京大学物理系，中国科学院半导体研究所 北京 |
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| 摘 要： | 本文报道在氮氧混合气体中用射频反应溅射法在硅表面成功淀积氮氧铝膜的实验研究结果。给出膜淀积工艺、膜的原子组元和浓度、含有不同氧原子浓度的膜的折射率和击穿电场强度以及膜的X-光衍射谱。
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| 关 键 词： | 硅表面 溅射 氮化铝膜 半导体 薄膜 |
Experimental Study of Sputtered Aluminum Oxynitride Film on Si Surface |
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| Wang Dehuang/. Experimental Study of Sputtered Aluminum Oxynitride Film on Si Surface[J]. Chinese Journal of Semiconductors, 1990, 11(10): 804-807 |
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| Authors: | Wang Dehuang/ |
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| Affiliation: | Wang Dehuang/Department of Physics,Peking UniversityGuo Liang/Institute of Semiconductors,Academia Sinica,Beijing |
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| Abstract: | The experimental study of aluminum oxynitride film deposited on Silicon surface byradio frequency reactive sputtering method in a mixture of forming nitrogen anl oxygen gasesis reported.The depositing Process, atomic Components and its concentrations, refractive indexand breakdown electric field of the depositied films with different oxygen atomic concentrationshave been determined. The X-ray d ffraction patters of the film are also given. |
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| Keywords: | Si surface Aluminum oxyn tride film |
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