Simulation of sub-0.1-μm MOSFETs with completely suppressedshort-channel effect |
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| Authors: | Tanaka J Toyabe T Ihara S Kimura S Noda H Itoh K |
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| Affiliation: | Hitachi Ltd., Tokyo; |
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| Abstract: | MOSFETs in the sub-0.1-μm regime were investigated using a nonplanar device simulator CADDETH-NP. It was found that even in this regime, the short-channel effect can be suppressed in grooved gate MOSFETs because of the concave corner of the gate insulator. MOSFETs with a gate length of 0.05 μm or less with no threshold voltage lowering can be made by optimizing the concave corner radius, junction depths, and channel doping |
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