Interfacial Microstructure and Growth Kinetics of Intermetallic Compound Layers in Sn-4 wt.%Ag/Cu-X (X = Zn,Ag, Sn) Couples |
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Authors: | H F Zou Q K Zhang Z F Zhang |
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Affiliation: | (1) Department of Electrical Engineering, Korea University, Anam-dong 5-ga, Seongbuk-gu, Seoul, 136-713, Republic of Korea;(2) Semiconductor Research Institute, Korea University, Anam-dong 5-ga, Seongbuk-gu, Seoul, 136-713, Republic of Korea |
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Abstract: | In the current study, the interfacial microstructures of Sn-Ag/Cu-X alloy (X = Ag, Sn or Zn) couples were investigated. The
experimental results confirm that addition of Ag or Zn can effectively suppress the growth of the Cu3Sn layer, while addition of Sn accelerates the growth of the Cu3Sn layer. Meanwhile, the formation of voids is effectively suppressed by alloying the Cu substrate. The disappearance of voids
and the absence of the Cu3Sn layer were well explained in terms of the phase diagram and the diffusion flux: the Cu3Sn phase is a nonequilibrium phase based on the Sn-Cu-Zn ternary phase diagram, since a high-Zn region is formed at the Cu6Sn5/Cu-Zn alloy interface; in addition, the high Sn diffusion flux in the Cu6Sn5 can suppress the growth of Cu3Sn and the formation of voids. |
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