| 125mm彩色AMOLED的多晶硅TFT基板 |
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| 引用本文： | 孟志国,郭海成,吴春亚,王文,熊绍珍.125mm彩色AMOLED的多晶硅TFT基板[J].半导体学报,2006,27(8):1514-1517. |
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| 作者姓名： | 孟志国 郭海成 吴春亚 王文 熊绍珍 |
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| 作者单位： | 南开大学信息学院光电子所，教育部光电子信息科学与技术重点实验室 (南开大学，天津大学;香港科技大学电机与电子工程系，香港;南开大学信息学院光电子所，教育部光电子信息科学与技术重点实验室 (南开大学，天津大学;香港科技大学电机与电子工程系，香港;南开大学信息学院光电子所，教育部光电子信息科学与技术重点实验室 (南开大学，天津大学 |
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| 基金项目： | 国家高技术研究发展计划 |
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| 摘 要： | 用化学法在非晶硅表面形成Ni源，经金属诱导晶化（MIC）得到了大晶粒碟型多晶硅. 为改善以此材料作有源层的多晶硅TFT的漏电特性和均匀性，采用动态杂质吸除方法对MIC 过程所残留的Ni进行了吸除. 通过流程简化，采用6块版工艺，研制出125mm QVGA有源选址有机发光显示的多晶硅TFT选址矩阵基板.
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| 关 键 词： | 大晶粒 碟型多晶硅 薄膜晶体管 有机发光像素电路 有源选址矩阵 |
| 文章编号： | 0253-4177(2006)08-1514-05 |
| 收稿时间： | 5/10/2006 3:48:33 PM |
| 修稿时间： | 5/10/2006 3:48:33 PM |
Fabrication of a 125mm Poly-Si TFT Active-Matrix Driving Color AMOLED |
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| Meng Zhiguo,Kwok Hoising,Wu Chuny,Wong Man and Xiong Shaozhen.Fabrication of a 125mm Poly-Si TFT Active-Matrix Driving Color AMOLED[J].Chinese Journal of Semiconductors,2006,27(8):1514-1517. |
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| Authors: | Meng Zhiguo Kwok Hoising Wu Chuny Wong Man and Xiong Shaozhen |
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| Affiliation: | Key Laboratory of Opto-Electronic Information Science and Technology of the Ministry of Education,Tianjin Key Laboratory for Photoelectronic Thin Film Devices and Technology,Institute of Photo-Electronic Thin Film Devices and Technology,Collage of Informa;Department of Electrical & Electronic Engineering,Hong Kong University of Science and Technology,Hong Kong,China;Key Laboratory of Opto-Electronic Information Science and Technology of the Ministry of Education,Tianjin Key Laboratory for Photoelectronic Thin Film Devices and Technology,Institute of Photo-Electronic Thin Film Devices and Technology,Collage of Informa;Department of Electrical & Electronic Engineering,Hong Kong University of Science and Technology,Hong Kong,China;Key Laboratory of Opto-Electronic Information Science and Technology of the Ministry of Education,Tianjin Key Laboratory for Photoelectronic Thin Film Devices and Technology,Institute of Photo-Electronic Thin Film Devices and Technology,Collage of Informa |
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| Abstract: | Disk-like large grain poly-si is formed using solution-based MIC (metal-induced crystallization).A Ni gettering treatment technique is adopted to improve the poly-Si material quality.Using this poly-Si material as the active layer,the leakage and uniformity characteristics of TFTs are improved.Additionally,the pixel circuit and their layout of the two TFTs are demonstrated.Adopting a 6-mask process similar to that of the normal a-si TFT AMLCD product line,125mm QVGA poly-si TFT active matrix panels for OLED are fabricated.A 125mm QVGA AMOLED panel,which can display color video image,is implemented using the active matrix panel. |
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| Keywords: | large grain size disk-like poly-Si TFT OLED pixel circuit active-matrix |
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