| 前驱气体CH_4、N_2的流量比对CH_x膜Raman谱的影响 |
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| 引用本文： | 辛煜,范叔平,狄国庆,沈明荣,甘肇强.前驱气体CH_4、N_2的流量比对CH_x膜Raman谱的影响[J].材料科学与工程学报,1998(3). |
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| 作者姓名： | 辛煜 范叔平 狄国庆 沈明荣 甘肇强 |
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| 作者单位： | 苏州大学 |
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| 摘 要： | 沉积在Ｓｉ（１００）基片上的ＣＮｘ膜是用微波等离子体化学气相沉积法（ＭＷＰＣＶＤ）制备的。本文着重探讨了ＣＨ４、Ｎ２的流量比对ＣＮｘ膜的Ｒａｍａｎ谱的影响，并采用了Ｘ－射线光电子能谱（ＸＰＳ）方法分析了ＣＮｘ膜的化学状态。
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| 关 键 词： | CNx膜，Raman谱，XPS，XRD，C≡N |
The Influence of Flow Ratio of Precursor Gas CH_4 and N 2 on Raman Spectra of CN_x Films |
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| Xin yu Fan Shuping Di Guoqing Shen Mingrong Gan Zhaoqiang Suzhou University,Suzhou.The Influence of Flow Ratio of Precursor Gas CH_4 and N 2 on Raman Spectra of CN_x Films[J].Journal of Materials Science and Engineering,1998(3). |
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| Authors: | Xin yu Fan Shuping Di Guoqing Shen Mingrong Gan Zhaoqiang Suzhou University Suzhou |
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| Affiliation: | Xin yu Fan Shuping Di Guoqing Shen Mingrong Gan Zhaoqiang Suzhou University,Suzhou 215006 |
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| Abstract: | CN x films were deposited on the Si(100) substrates with microwave plasma CVD method. In this letter, we mainly discuss the influences of the flow ratio of precursor gases CH 4 and N 2 on Raman spectra of CN x films and analyze the chemical states of CN x films with X-ray photoelectron spectrum(XPS). |
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