The effects of temperature and light concentration on the GaInP/GaAs multijunction solar cell’s performance |
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Authors: | M Y Feteha G M Eldallal |
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Affiliation: | a Institute of Graduate Studies and Research, Alexandria University, P.O. Box 832, Alexandria, Egypt;b Engineering, Mathematics & Physics Dept., Faculty of Engineering, Alexandria University, 21544, Alexandria, Egypt |
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Abstract: | Monolithic Ga0.49In0.51P/GaAs cascade solar cells with a p+/n+ GaAs tunnel junction were grown by MOCVD technique. The variation of the photovoltage, photocurrent, fill factor, efficiency, I–V characteristics and spectral response under different temperatures (25–75 °C), and light intensity values (1–40 sun), were investigated experimentally.The open-circuit voltage of the multijunction cell decreases with the temperature increase at a rate of 5.5 mV/°C. The efficiency of the cascade structure under investigation was increased with an increase in the light concentration up to a point where the series resistance and the tunnel junction effects become significant. |
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