Deposition and dielectric properties of (Al2O3) x (TiO2)1−x thin films |
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| Authors: | P. Vitanov A. Harizanova T. Ivanova K. Ivanova |
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| Affiliation: | 1. Bulgarian Academy of Sciences, Central Laboratory for Solar Energy and New Energy Sources, Blvd Tzarigradsko Chaussee 72, 1784, Sofia, Bulgaria
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| Abstract: | The motivation for this study was to obtain an alloy system (Al2O3) x (TiO2)1?x , that is thermodynamically stable, in direct contact with Si and possessing a high dielectric constant. In the present study, (Al2O3) x (TiO)1?x films were investigated. They were prepared by spin coating from a sol solution, with additional thermal annealing. The chemical composition and stoichiometry of the films was studied by X-ray photoelectron spectroscopy. For the electrical characteristics, MIS capacitors were fabricated. The determined relative dielectric constants were larger than the reported values for pure Al2O3, due to the presence of TiO2. |
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