| 碲镉汞薄膜少子寿命测试研究 |
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| 引用本文： | 折伟林,申晨,李乾,刘铭,李达,师景霞. 碲镉汞薄膜少子寿命测试研究[J]. 红外, 2021, 42(6): 1-6 |
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| 作者姓名： | 折伟林 申晨 李乾 刘铭 李达 师景霞 |
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| 作者单位： | 华北光电技术研究所,北京100015 |
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| 摘 要： | 碲镉汞(HgCdTe)材料的少子寿命是影响碲镉汞红外探测器性能的重要参数.分别采用微波光电导衰减(Microwave Photoconductivity Decay,μ-PCD)法和微波探测光电导(Microwave Detected Photoconductivity,MDP)法对 HgCdTe 薄膜的少子寿命进行了...
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| 关 键 词： | 碲镉汞 少子寿命 微波光电导衰减法 微波探测光电导法 |
| 收稿时间： | 2021-01-21 |
| 修稿时间： | 2021-01-31 |
Research on Minority Carrier Lifetime Measurements of HgCdTe Thin Film |
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| She Weilin,Shen Chen,Li Qian,Liu Ming,Li Da and Shi Jingxia. Research on Minority Carrier Lifetime Measurements of HgCdTe Thin Film[J]. Infrared, 2021, 42(6): 1-6 |
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| Authors: | She Weilin Shen Chen Li Qian Liu Ming Li Da Shi Jingxia |
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| Affiliation: | North China Research Institute of Electro-Optics,North China Research Institute of Electro-Optics,North China Research Institute of Electro-Optics,North China Research Institute of Electro-Optics,North China Research Institute of Electro-Optics,North China Research Institute of Electro-Optics |
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| Abstract: | |
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| Keywords: | HgCdTe minority carrier lifetime microwave photoconductivity decay method microwave detected photoconductivity method |
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