Film thickness dependence of critical current density for YBa2Cu3O7 films post-annealed at a low oxygen partial pressure |
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Authors: | A Mogro-Campero and L G Turner |
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Affiliation: | (1) GE Research and Development Center, 12301-0008 Schenectady, New York |
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Abstract: | The variation of critical current density at 77 K as a function of film thickness was studied for YBa2Cu3O7 films on (100) LaAlO3 substrates. Film thicknesses were in the range 0.2–1.6 m. The films were deposited by co-evaporation and post-annealed under conditions which have previously resulted in high-quality films (750°C and an oxygen partial pressure of 29 Pa). The critical current density at 77 K exceeds 1 MA cm–2 for the thinner films, and decreases with increasing film thickness in excess of about 0.4 m. The decrease is in rough agreement with a switch fromc-axis toa-axis growth at about this critical thickness. A good anticorrelation was found between room temperature resistivity and critical current density at 77 K. The results are compared to those obtained before by post-annealing at 850°C in 1 atm of oxygen. |
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Keywords: | Superconducting films YBa2Cu3O7 critical current density |
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