采用电化学法测量Ga_xIn_(1-x)As和Ga_xIn_(1-x)As_(1-y)P_y的掺杂浓度分布 |
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引用本文: | 俞冠高
,王翠莲.采用电化学法测量Ga_xIn_(1-x)As和Ga_xIn_(1-x)As_(1-y)P_y的掺杂浓度分布[J].固体电子学研究与进展,1983(1). |
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作者姓名: | 俞冠高 王翠莲 |
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摘 要: | 研究了InP掺杂浓度分布,确认测量系统的可信性.在多元材料生长中,组分控制重复性欠佳的情况下,根据每片材料的C~(-2)-V特性测出内建电势V_D,可以得出接近于材料实际的掺杂浓度分布.测得掺杂浓度在10~(16)cm~(-3)的Ga_(0.47)In_(0.53)As的V_D约0.3V.结果表明,用作长波长的光探测器的N型三元层掺杂分布平坦.闭管锌扩散形成的P-N结为突变结型.
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Measuring Impurity Profile of Ga_xln_(1-x)As and Ga_xln_(1-x)As_(1-y)P_y by Electrochemical Technique |
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Abstract: | Impurity profile of InP material has been studied and the measuring system is proved to be trustworthy. The measured profile is close to the real one only using the built-in potential VD resulted from the C-2-V characteristic of each wafer itself in case the componet of the polynary compound can't be reproduced exactly during its growth. VD of the Ga0.47In0.53As with a doping density of 10~(16)cm-3 is about 0.3V. The results show that the profile of the N ternary layer for a long wavelength potode-tector is flat and the P-N junction formed by closed-tube Zn diffusion is abrupt. |
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