High-power InGaAs/GaAs 1.3 μm VCSELS based on novel electrical confinement scheme |
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| Authors: | von Wurtemberg R.M. Berggren J. Dainese M. Hammar M. |
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| Affiliation: | R. Inst. of Technol. (KTH), Kista; |
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| Abstract: | Reported are 1.3 mum InGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) with a novel electrical confinement scheme based on lithographic definition and selective area epitaxial regrowth in the cavity region. More than 6 mW of output power with a record high differential efficiency of more than 70% is emitted from 10 mum large devices. |
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