Deuterium retention in SiC coated graphite by D2+ implantation

The doped graphite tiles bolted to the active cooling heat sink, made of GBST1308 (1% B₄C, 2.5% Si, 7.5% Ti) coated with SiC, are now being used as the only plasma facing material (PFM) for the EAST device since the campaign of 2008. From the plasma density and fueling point of view, it is important to study thoroughly the hydrogen isotope retention in this kind of SiC-coated doped graphite. D₂⁺ implantations into the SiC coated doped graphite were performed at Shizuoka University. The chemical states of Si and C were studied by means of X-ray photoelectron spectroscopy (XPS), and the thermal desorption behavior of deuterium was analyzed by thermal desorption spectroscopy (TDS). It was found that deuterium was trapped by both C and Si in the SiC coatings. In the previous studies, Oya et al. reported the deuterium retention behavior in polycrystalline β-SiC. In this paper, difference of retention behavior in β-SiC and SiC coating will be also discussed.