Atomic layer deposition enabled interconnect technology for vertical nanowire arrays |
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Authors: | Jen-Hau Cheng Dragos Seghete Myongjai Lee John B Schlager Kris A Bertness Norman A Sanford Ronggui Yang Steven M George YC Lee |
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Affiliation: | 1. Department of Mechanical Engineering, University of Colorado, Boulder, CO 80309, United States;2. Department of Chemistry and Biochemistry, University of Colorado, Boulder, CO 80309, United States;3. National Institute of Standards and Technology, Boulder, CO 80305, United States;4. DARPA Center for Integrated Micro/Nano-Electromechanical Transducers (iMINT), University of Colorado, Boulder, CO 80309-0427, United States |
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Abstract: | We have demonstrated an atomic layer deposition (ALD) enabled interconnect technology for vertical, c-axis oriented gallium nitride (GaN) nanowire (NW, 5–10 μm in length, 80–200 nm in diameter) arrays encapsulated by benzocyclobutene (BCB). The nano-scaled ALD multilayer is essential to provide conformal co-axial dielectric (ALD-alumina)/conductor (ALD-tungsten) coverage and precise thickness control for nanowire metallization. Furthermore, we have successfully developed a fabrication process to locally remove and connect tungsten (W) interconnect on NWs. Cross-sectional image taken in a focused ion beam (FIB) tool confirms the conformality of ALD interconnects. Photoluminescence (PL) wavelengths of the nanowires array can be tuned dynamically by changing the input current supplied to ALD-tungsten interconnect which heats nanowires. Such an experiment also demonstrated the quality of interconnect. This interconnect technology can be applied to various vertical nanowire-based devices, such as nanowire light emitting diodes, nanowire-based field effect transistors, resonators, batteries or biomedical applications. |
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