Post-deposition treatment behaviour of zinc oxide thin films in hydrogen peroxide solution

Abstract

Zinc oxide thin films with c axis orientation were grown on Si (100) by radio frequency magnetron sputtering in mixture of argon and oxygen environment using Zn target. These films are treated in hydrogen peroxide (H₂O₂) solution at room temperature for one hour and two hours. During this study it has been found that post-deposition treatment of ZnO films improves the film quality. Structural, electrical and optical properties have been compared before and after H₂O₂ treatment by X-ray diffraction analysis, ac conductivity, band gap and refractive index. The full width at half maximum decreases after post-deposition process, which improves the crystal quality. The relief in stress has been observed but films are not fully stress free. The film after treatment becomes highly insulating having resistivity of the order of 10¹⁴ Ω cm^?1 and can be used for piezoelectric applications. The increase in the band gap and refractive index, near to bulk value, has been observed after post-deposition treatment indicating the increase in grain size and crystal quality.