New chemical methods for the deposition of Cu1·8S and TlSe thin film |
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| Authors: | R N Bhattacharya P Pramanik |
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| Affiliation: | (1) Department of Chemistry, Indian Institute of Technology, 721 302 Kharagpur, India |
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| Abstract: | New chemical methods for the deposition of thin film of Cu1·8S and TlSe have been developed. The deposition of Cu1·8S thin film has been performed by thiourea, ammonia and Cu2+ ions at room temperature, while TlSe thin films are obtained from triethanolamine as complexing agent, ammonia, sodium selenosulphate solution and Tl1+ ions at room temperature. The electrical resistance, mobility, carrier concentration and optical band gap have been measured. |
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| Keywords: | Copper sulfide thallium selenide thin film chemical deposition |
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