New TIT capacitor with ZrO2/Al2O3/ZrO2 dielectrics for 60 nm and below DRAMs |
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Authors: | Ho Jin Cho Young Dae Kim Dong Su Park Euna Lee Cheol Hwan Park Jun Soo Jang Keum Bum Lee Hai Won Kim Young Jong Ki Il Keun Han Yong Wook Song |
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Affiliation: | aR&D Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eup, Icheon-si, Kyoungi-do 467-701, Republic of Korea |
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Abstract: | New ZrO2/Al2O3/ZrO2 (ZAZ) dielectric film was successfully developed for DRAM capacitor dielectrics of 60 nm and below technologies. ZAZ dielectric film grown by ALD has a mixture structure of crystalline phase ZrO2 and amorphous phase Al2O3 in order to optimize dielectric properties. ZAZ TIT capacitor showed small Tox.eq of 8.5 Å and a low leakage current density of 0.35 fA/cell, which meet leakage current criteria of 0.5 fA/cell for mass production. ZAZ TIT capacitor showed a smaller cap leak fail bit than HAH capacitor and stable leakage current up to 550 °C anneal. TDDB (time dependent dielectric breakdown) behavior reliably satisfied the 10-year lifetime criteria within operation voltage range. |
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Keywords: | DRAM capacitor TIT capacitor ZrO2/Al2O3/ZrO2 (ZAZ) |
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