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提拉法生长大尺寸氟化锂单晶体的研究
引用本文:孔宝国,陈瑞芳. 提拉法生长大尺寸氟化锂单晶体的研究[J]. 光学仪器, 1995, 17(3): 12-15
作者姓名:孔宝国  陈瑞芳
作者单位:上海光学仪器研究所!上海,200093,上海光学仪器研究所!上海,200093
摘    要:介绍了在真空下用引上法(CZ)生长氟化锂(LiF)单晶体的一些情况.采用该方法生长出的晶体,其单晶率优于埚下降法(BG),晶体的质量和利用率大幅度提高.

关 键 词:温度梯度  生长  旋转及降温速率

The Research of Growing Large Size LiF Single Crystal by the Czockralski Method
Kong Bao-guo,Chen Rui-fang. The Research of Growing Large Size LiF Single Crystal by the Czockralski Method[J]. Optical Instruments, 1995, 17(3): 12-15
Authors:Kong Bao-guo  Chen Rui-fang
Abstract:In this paper, we present the growth of LiF single crystal by the czockralski method in vacuum. The rate of single crystal product of the crystals grown by the czockralskimethod is higher than which grown by the storkbarger than storkbarger method. The quality and useful part of crystal have been advanced largely.
Keywords:Temperature Gradient   Crystal Growth   Rotration  Rate of Decrease in Temperature  
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