Temperature Dependent Residual Stress Models for Ultra-High-Temperature Ceramics on High Temperature Oxidation

The strength of SiC-depleted layer of ultra-high-temperature ceramics on high temperature oxidation degrades seriously. The research for residual stresses developed within the SiC-depleted layer is important and necessary. In this work, the residual stress evolutions in the SiC-depleted layer and the unoxidized substrate in various stages of oxidation are studied by using the characterization models. The temperature and oxidation time dependent mechanical/thermal properties of each phase in SiC-depleted layer are considered in the models. The study shows that the SiC-depleted layer would suffer from large tensile stresses due to the great temperature changes and the formation of pores on high temperature oxidation. The stresses may lead to the cracking and even the delamination of the oxidation layer.