| 可变增益宽带低噪声中频放大器 |
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| 引用本文： | 钟国发. 可变增益宽带低噪声中频放大器[J]. 固体电子学研究与进展, 1985, 0(3) |
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| 作者姓名： | 钟国发 |
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| 作者单位： | 南京固体器件研究所 |
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| 摘 要： | 本文描述了利用双栅MESFET作宽带可变增益放大器的原理.业已制成的二级级联放大器,利用双栅MESFET控制,在20MHz带宽内(1dB带宽)增益可从6～36dB连续变化,而其输出的中心频率和通带特性保持不变.
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A Wide Band Low Noise IF Amplifier with Variable Gain |
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| Abstract: | This paper describes the principle of variable gain amplifier fabricated with dual-gate MESFET. The two-stage amplifier is controlled by a dual gate MESFET. The gain can vary from 6 to 36dB continuously within the bandwidth of 20MHz (1dB), while the centre frequency and the characteristics in pass-band for the output remain unchanged. |
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