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高压快速调Q开关电源的设计
引用本文:张鹏泉,叶志生,撒昱.高压快速调Q开关电源的设计[J].电力电子技术,2005,39(3):90-91,63.
作者姓名:张鹏泉  叶志生  撒昱
作者单位:天津大学,天津,300072;天津大学,天津,300072;天津大学,天津,300072
摘    要:介绍一种高压快速调Q开关电源,设计了以功率MOS管驱动高压电子管为主电路的快速开关,并设计了电源的接口电路、MOS管驱动电路、过流保护电路及高压源稳压电路。实验证明,该电源性能优良且工作稳定。该电源用于YAG激光器的电光调Q时,加在电光晶体KD*P两端的4.1kV高压退压前沿为10ns,在重复频率为3kHz的工作状态下有稳定的输出。

关 键 词:电源  电子管/金属氧化物半导体管  调Q开关电源  品质因数
文章编号:1000-100X(2005)03-0090-02

Design of A High-voltage High-speed Q-regulated Switching Power
ZHANG Peng-quan,YE Zhi-sheng,SA Yu.Design of A High-voltage High-speed Q-regulated Switching Power[J].Power Electronics,2005,39(3):90-91,63.
Authors:ZHANG Peng-quan  YE Zhi-sheng  SA Yu
Abstract:This paper presents a new high-voltage high-speed Q-regulated switching power and describes the design of the mixed main circuit of MOS transistor and electron tube,and also some support circuit such as the interface circuit,MOS drive circuit,overflowing protect circuit and high-voltage stabilizing circuit.The experiment indicates that the Q-regulated switching power has the advantages of stable performances and reliable operation.The new power is applied to YAG laser is used,and fall time of 4.1kV voltage on the electro-optic crystals is 10ns,and the driver has steady operation at 3kHz repetitive frequence.
Keywords:power supply  electron tube / MOS transistor  Q-regulated switching power  quality factor  
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