| 微波退火非晶硅薄膜低温晶化研究 |
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| 引用本文： | 饶瑞,曾祥斌,徐重阳,孙国才.微波退火非晶硅薄膜低温晶化研究[J].压电与声光,2001,23(1):53-55. |
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| 作者姓名： | 饶瑞 曾祥斌 徐重阳 孙国才 |
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| 作者单位： | 1. 华中科技大学 电子科学与技术系,
2. 华中科技大学 物理系, |
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| 基金项目： | 华中理工大学与香港科技大学合作研究资助项目 |
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| 摘 要： | 多晶硅薄膜晶体管以及其独特的优点在液晶显示领域中起着重要的作用。为了满足在普通玻璃衬底上制备多晶硅薄膜晶体管有源矩阵液晶显示器，低温制备（＜600℃高质量多晶硅薄膜已成为研究热点。文章研究了一种低温制备多晶硅薄膜的新工艺；微波退火非晶硅薄膜固相晶化法，利用X射线衍射、拉曼光谱和扫描电镜分析了微波退火工艺对非晶硅薄膜固相晶化的影响，成功实现了低温制备多晶硅薄膜。
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| 关 键 词： | 微波退火 低温晶化 非晶硅薄膜 多晶硅薄膜 |
| 文章编号： | 1004-2474（2001）01-0053-03 |
| 修稿时间： | 2000年7月7日 |
Study on the Crystallization of Amorphous Silicon Thin Film by Microwave Annealing at Low Temperature |
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| RAO Rui ,XU Chong yang ,SUN Guo cai ,ZENG Xiang bin.Study on the Crystallization of Amorphous Silicon Thin Film by Microwave Annealing at Low Temperature[J].Piezoelectrics & Acoustooptics,2001,23(1):53-55. |
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| Authors: | RAO Rui XU Chong yang SUN Guo cai ZENG Xiang bin |
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| Affiliation: | RAO Rui 1,XU Chong yang 1,SUN Guo cai 2,ZENG Xiang bin 1 |
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| Abstract: | Polycrystalline silicon thin film transistor has played adominant role in the area of liquid display．Preparation of polycrystalline silicon thin film with high quality at low temperature（＜600 °C）has been recently become one of the hot spots in order to meet the requirement of polycrystalline silicon thin film transistors in the active matrix liquid crystal display on the substrate of common glass．We developed a new process for preparing polycrystalline silicon thin film at low temperature by microwave-induced solid phase crystallization of amorphous silicon thin film．The influence of microwave annealing process on the crystallization of amorphous silicon thin film has been studied by XRD，raman spectrum and SEM．And then polycrystalline silicon thin film was prepared at low temperature． |
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| Keywords: | microwave annealing crystallization at low temperature:amorphous silicon thin film crystalline silicon thin film |
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