Electrically-pumped vertical-cavity lasers with Al/sub x/O/sub y/-GaAs reflectors |
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| Authors: | MH MacDougal Gye Mo Yang AE Bond Chao-Kun Lin D Tishinin PD Dapkus |
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| Affiliation: | Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA; |
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| Abstract: | We have fabricated the first electrically-pumped vertical-cavity surface-emitting lasers (VCSELs) which use oxide-based distributed Bragg reflectors (DBRs) on both sides of the gain region. They require a third the epitaxial growth time of VCSELs with semiconductor DBRs. We obtain threshold currents as low as 160 /spl mu/A in VCSELs with an active area of 8 /spl mu/m/spl times/8 /spl mu/m using a two quantum well InGaAs-GaAs active region. By etching away mirror pairs from the top reflector, quantum efficiencies as high as 61% are attained, while still maintaining a low threshold current of 290 /spl mu/A. |
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