| 氢氧化四甲基铵腐蚀硅性能的改善 |
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| 引用本文： | 杨笛, ,余金中, ,陈少武, ,攀中朝, ,李运涛. 氢氧化四甲基铵腐蚀硅性能的改善[J]. 中国化学工程学报, 2005, 13(1): 48-50 |
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| 作者姓名： | 杨笛 余金中 陈少武 攀中朝 李运涛 |
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| 作者单位： | StateKeyLaboratoryonIntegratedOptoelectronics,InstituteofSemiconductors,ChineseAcademyofSciences,Beijing100083,China |
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| 基金项目： | 国家自然科学基金，国家高技术研究发展计划(863计划)，国家重点基础研究发展计划(973计划) |
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| 摘 要： | An optimal concentration of the etching solution for deep etching of silicon, including 3% tetramethyl ammonium hydroxide and 0.3% (NH4)2S208, was achieved in this paper. For this etching solution, the etching rates of silicon and silicon dioxide were about 1.1μm.min^-1 and 0.5 nm.min^-1, respectively. The etching ratio between (100) and (111) planes was about 34:1, and the etched surface was very smooth.
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| 关 键 词： | 硅氧化物 四甲基铵羟化物 蚀刻技术 光学设备 加工技术 |
| 修稿时间： | |
An Improvement on Si-etching Tetramethyl Ammonium Hydroxide Solution |
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| YANG Di,YU Jinzhong,CHEN Shaowu,FAN Zhongchao,LI Yuntao. An Improvement on Si-etching Tetramethyl Ammonium Hydroxide Solution[J]. Chinese Journal of Chemical Engineering, 2005, 13(1): 48-50 |
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| Authors: | YANG Di YU Jinzhong CHEN Shaowu FAN Zhongchao LI Yuntao |
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| Affiliation: | State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | An optimal concentration of the etching solution for deep etching of silicon, including 3% tetramethyl ammonium hydroxide and 0.3% (NH4)2S2O8, was achieved in this paper. For this etching solution, the etching rates (100) and (111) planes was about 34:1, and the etched surface was very smooth. |
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| Keywords: | silicon silicon dioxide tetramethyl ammonium hydroxide etching rate |
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