Correspondence among PL measurement, MBIC measurement and defect delineation in polycrystalline cast-Si solar cells

We report the correspondence between the photoluminescence (PL) measurement, monochromatic-light-beam-induced current (MBIC) measurement and defect delineation in polycrystalline cast-Si solar cells. It was found that the peak of the band-edge PL emission in the hydrogenerated and non-hydrogenerated cast-Si shifted from 1.093 eV in the single crystalline CZ-Si to 1.075 eV at room temperature and the band-edge PL mapping corresponded with the MBIC mapping and defect delineation pattern if excluding the surface damages delineated by the MD-1 etchant.