Donor levels and the microscopic structure of the DX center in n-type Si-doped AlxGa0.51-xIn0.49P grown by molecular-beam epitaxy期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Donor levels and the microscopic structure of the DX center in n-type Si-doped AlxGa0.51-xIn0.49P grown by molecular-beam epitaxy

Authors:	J M?kinen T Laine J Partanen K Saarinen P Hautoj?rvi K Tappura T Hakkarainen H Asonen M Pessa JP Kauppinen K V?nttinen MA Paalanen J Likonen

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