New field-effect transistor with quantum wire and modulation-dopedheterostructures |
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| Authors: | Tsubaki K. Fukui T. Tokura Y. Saito H. Susa N. |
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| Affiliation: | NTT Basic Res. Labs., Tokyo; |
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| Abstract: | A new field-effect transistor, consisting of an AlGaAs/GaAs heterostructure and an (AlAs)0.25(GaAs)0.75 vertical superlattice, is fabricated. It has a large transconductance of 14 mS/mm at a gate length of 250 μm, corresponding to a transconductance of 3.5 S/mm for 1 μm gate length. Hall measurement revealed a novel FET operation mode called `velocity modulation' |
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