| Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices |
| |
| 作者单位： | State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, Universityof Electronic Science and Technology of China （UESTC）, Chengdu 610054, P. R. China |
| |
| 基金项目： | 国家自然科学基金，教育部跨世纪优秀人才培养计划，Young Talent Project of UESTC |
| |
| 摘 要： | A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.
|
| 关 键 词： | 光散射 性状 半导体 传输过程 |
| 收稿时间： | 2007-08-29 |
Influence of PVK: NPB hole transporting layer on the characteristics of organic light-emitting devices |
| |
| Wen Wen,Jun-sheng Yu,Lu Li,Tao M,Xiao-qing Tang and Ya-dong Jiang. Influence of PVK: NPB hole transporting layer on the characteristics of organic light-emitting devices[J]. Opto-electronics Letters, 2008, 4(3): 201-204. DOI: 10.1007/s11801-008-7156-x |
| |
| Authors: | Wen Wen Jun-sheng Yu Lu Li Tao M Xiao-qing Tang Ya-dong Jiang |
| |
| Affiliation: | (1) State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, P. R. China |
| |
| Abstract: | A doping system consisting of NPB and PVK is employed as a composite hole transporting layer (CHTL).By adjusting the component ratio of the doping system,a series of devices with different concentration proportion of PVK:NPB are constructed.The result shows that doping concentration of NPB enhances the competence of hole transporting ability,and modifies the recombination region of charge as well as affects the surface morphology of doped film.Optimum device with a maximum brightness of 7852 cd/m2 and a power efficiency of 1.75 1m/W has been obtained by choosing a concentration |
| |
| Keywords: | Influence devices organic characteristics layer power efficiency Optimum maximum brightness recombination region charge surface morphology doped film result ability series different |
| 本文献已被 CNKI 维普 万方数据 SpringerLink 等数据库收录！ |
| 点击此处可从《光电子快报》浏览原始摘要信息 |
|
点击此处可从《光电子快报》下载全文 |
