The TCR of Ni24.9Cr72.5Si2.6 thin films deposited by DC and RF magnetronsputtering |
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Authors: | Bing Cheng Yijun Yin Jianqiang Han Jie Zhang |
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Affiliation: | The College of Mechanical & Electrical Engineering, China Jiliang University, Hangzhou 310018, China |
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Abstract: | The temperature coefficient of resistance (abbreviated as TCR) of thin film resistors on some sensor chips,such as thermal converters,should be less than several ppm/℃.However,the TCR of reported thin films is larger than 5 ppm/℃.In this paper,Ni24.9Cr72.5Si2.6 films are deposited on silicon dioxide film by DC and RF magnetron sputtering.Then as-deposited films are annealed at 450 ℃ under different durations in N2 atmosphere.The sheet resistance of thin films with various thickness and annealing time are measured by the four probe re-sistivity test system at temperature of 20,50,100,150,and 200 ℃ and then the TCR of thin films are calculated.Experimental results show that the film with the TCR of only-0.86 ppm/℃ can be achieved by RF magnetron sputtering and appropriate annealing conditions. |
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Keywords: | magnetron sputtering NiCrSi thin film sheet resistance temperature coefficient of resistance thermal converter |
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