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| 高频放电等离子体引发碳化硅表面接枝聚合甲基丙烯酸甲酯 | |
| 引用本文： | 韦刚,钟少锋,孟月东,舒兴胜. 高频放电等离子体引发碳化硅表面接枝聚合甲基丙烯酸甲酯[J]. 材料科学与工艺, 2009, 17(1): 105-109 |
| 作者姓名： | 韦刚 钟少锋 孟月东 舒兴胜 |
| 作者单位： | 韦刚,孟月东,舒兴胜,WEI Gang,MENG Yue-dong,SHU Xing-sheng(中科院等离子体物理研究所,安徽,合肥,230031);钟少锋,ZHONG Shao-feng(中科院等离子体物理研究所,安徽,合肥,230031;中科院光电研究院,北京,100010) |
| 摘 要： | 高频放电氮气等离子体表面处理纳米碳化硅粉体,进而在碳化硅表面上引发甲基丙烯酸甲酯单体接枝聚合,在纳米碳化硅表面形成一层保护膜.红外(FTIR),X射线光电子能谱(XPS)以及热失重分析(TGA)测试表明该聚合膜是通过化学键连接在碳化硅表面的,X射线衍射光谱(XRD)表明经等离子体处理改性的碳化硅粉体只是其表面性质发生了改变,其晶体结构并没有发生任何变化. |
| 关 键 词： | 等离子体 接枝聚合 纳米碳化硅 聚甲基丙烯酸甲酯 |
High frequency discharge plasma induced grafting of PMMA onto silicon carbide powder |
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| WEI Gang,ZHONG Shao-feng,,MENG Yue-dong,SHU Xing-sheng. High frequency discharge plasma induced grafting of PMMA onto silicon carbide powder[J]. Materials Science and Technology, 2009, 17(1): 105-109 | |
| Authors: | WEI Gang ZHONG Shao-feng MENG Yue-dong SHU Xing-sheng |
| Affiliation: | 1. Institute of Plasma Physics;Chinese Academy of Sciences;Hefei 230031;China;2. Academy of Opto-Electronics;Beijing 100010;China |
| Abstract: | Poly(methyl methacrylate) (PMMA) grafted onto nano-SiC particles is investigated in this study. In our experiment,the grafting polymerization reaction is induced by high frequency discharge N2 plasma treatment of the nanosized powder. FTIR、XPS and TGA results show that PMMA is grafted onto the surfaces of silicon carbide powder,and crystal structure of the silicon carbide powder observed with XRD spectra was unchanged before and after plasma graft polymerization. |
| Keywords: | plasma graft polymerization SiC nanoparticle PMMA |
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