| 14W X波段AlGaN/GaN HEMT功率MMIC |
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| 引用本文： | 陈堂胜,张斌,任春江,焦刚,郑维彬,陈辰.14W X波段AlGaN/GaN HEMT功率MMIC[J].半导体学报,2008,29(6):1027-1030. |
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| 作者姓名： | 陈堂胜 张斌 任春江 焦刚 郑维彬 陈辰 |
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| 作者单位： | 南京电子器件研究所单片集成电路与模块国家重点实验室，南京 210016;南京电子器件研究所单片集成电路与模块国家重点实验室，南京 210016;南京电子器件研究所单片集成电路与模块国家重点实验室，南京 210016;南京电子器件研究所单片集成电路与模块国家重点实验室，南京 210016;南京电子器件研究所单片集成电路与模块国家重点实验室，南京 210016;南京电子器件研究所单片集成电路与模块国家重点实验室，南京 210016 |
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| 摘 要： | 报道了研制的SiC衬底AIGaN/GaN HEMT微带结构微波功率MMIC,芯片工艺采用凹槽栅场板结构提高AlGaN/GaNHEMTs的微波功率特性.S参数测试结果表明AlGaN/GaN HEMTs的频率特性随器件的工作电压变化显著.研制的该2级功率MMIC在9～11GHz带内30V工作,输出功率大于10W,功率增益大于12dB,带内峰值输出功率达到14.7W,功率增益为13.7dB,功率附加效率为23%,该芯片尺寸仅为2.0mm×1.1mm.与已发表的X波段AlGaN/GaN HEMT功率MMIC研制结果相比,本项工作在单位毫米栅宽输出功率和芯片单位面积输出功率方面具有优势.
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| 关 键 词： | X波段 AlGaN/GaN 高电子迁移率晶体管 功率MMIC X-band AlGaN/GaN HEMTs power MMIC |
| 修稿时间： | 1/11/2008 6:13:02 PM |
14W X-Band AlGaN/GaN HEMT Power MMICs |
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| Chen Tangsheng,Zhang Bin,Ren Chunjiang,Jiao Gang,Zheng Weibin and Chen Chen.14W X-Band AlGaN/GaN HEMT Power MMICs[J].Chinese Journal of Semiconductors,2008,29(6):1027-1030. |
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| Authors: | Chen Tangsheng Zhang Bin Ren Chunjiang Jiao Gang Zheng Weibin and Chen Chen |
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| Affiliation: | National Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute,Nanjing 210016,China;National Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute,Nanjing 210016,China;National Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute,Nanjing 210016,China;National Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute,Nanjing 210016,China;National Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute,Nanjing 210016,China;National Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute,Nanjing 210016,China |
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| Abstract: | The development of an AlGaN/GaN HEMT power MMIC on SI-SiC designed in microstrip technology is presented.A recessed-gate and a field-plate are used in the device processing to improve the performance of the AlGaN/GaN HEMTs.S-parameter measurements show that the frequency performance of the AlGaN/GaN HEMTs depends significantly on the operating voltage.Higher operating voltage is a key to higher power gain for the AlGaN/GaN HEMTs.The developed 2-stage power MMIC delivers an output power of more than 10W with... |
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| Keywords: | X-band AlGaN/GaN HEMTs power MMIC |
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