|
|||||
|
|
Electrical resistivity anisotropy in layered p-SnSe single crystals |
|
| Authors: | Ajay Agarwal M N Vashi D Lakshminarayana N M Batra |
| Affiliation: | (1) Department of Physics, Shree Jayendrapuri Arts and Science College, South Gujarat University, Bharuch, 392 002 Gujarat, India;(2) Department of Physics and Department of Physics and Electronics, Shree Jayendrapuri Arts and Science College, South Gujarat University, Bharuch, 392 002 Gujarat, India;(3) Department of Electronics, Sardar Patel University, Vallabh Vidyanagar, 388 120 Gujarat, India;(4) Department of Electronics and Department of Materials Science, Sardar Patel University, Vallabh Vidyanagar, 388 120 Gujarat, India |
| Abstract: | Single crystals of p-type SnSe were grown by both direct vapor transport (DVT) and chemical vapor transport (CVT) techniques. The d.c. electrical resistivity anisotropy has been investigated for the first time in these layered crystals. The DVT grown crystals exhibited a large anisotropy ratio and also a higher activation energy compared to that of CVT grown crystals. The electron microscopic examination revealed the presence of a large concentration of stacking faults in the DVT grown crystals. The resistivity anisotropy is accordingly discussed in terms of stacking disorder. |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ | |