根据概率分布建立有源器件的统计模型

给出一种新的统计模型的建立方法。在有源器件物理模型的基础上，通过优化物理模型参数的均值和均方根，使所建立统计模型的Ｓ参数在各个频率上的概率分布逼近测量数据的概率分布。从建立微波ＭＥＳＦＥＴ统计模型的算例结果看出，本方法不仅能比较好地拟合样本Ｓ参数的概率分布，而且提高了计算效率。

A New Approach to Statistical Modelling of Active Devices by Fitting Probability Distribution

In this paper, a new approach to establishing statistical model of microwave FETs is presented. The statistical model is based on a physical model of active devices and directly extracted by optimizing the mean values and standard deviations of physical parameters to fit the probability distribution of the model responseto those of the sample data. The results show that the statistical model can fit theprobability distribution of sample data with better accuracy and fewer CPU time.