Lateral, Ge, nanowire growth on SiO2

Vapor-liquid-solid (VLS) nanowires (NWs) typically grow in 111] directions. Previously, the authors have demonstrated guided Si NW growth, engineering the VLS NWs to grow in a 110] direction against a SiO(2) surface. In this work, the authors demonstrate guided high-quality Ge nanowire growth against a SiO(2) surface in the substrate plane to bridge between two Si mesas. The authors explore the interfaces between a Ge NW and the two Si device-layer mesas and report high-quality, epitaxial interfaces between the Ge NW and both Si mesas.