Iron Loss Characteristics of Electrical Steel Sheet under Inverter Excitation by Power Semiconductor with Extremely Low On‐Voltage Property

In this study, it is demonstrated that the iron loss from the SiC‐MOSFET, which represents a new power semiconductor with an extremely low on‐voltage for electric machine drives, is almost the same as that from an Si‐IGBT, which is a conventional power semiconductor. In order to evaluate the iron loss characteristics when an SiC device is used, two single‐phase pulse width modulation inverters were built and used for the excitation of a ring made up of electrical steel sheet. One of the inverter employed an SiC‐MOSFET, and the other inverter employed an Si‐IGBT. The iron losses for the two inverters are compared.