High k dielectrics for low temperature electronics

In this work the electrical and structural properties of two high k materials as hafnium oxide (HfO₂) and tantalum oxide (Ta₂O₅) produced at room temperature are exploited. Aiming low temperature processing two techniques were employed: r.f. sputtering and electron beam evaporation.The sputtered HfO₂ films present a nanocrystalline structure when deposited at room temperature. The same does not happen for the evaporated films, which are essentially amorphous. The density and the electrical performance of both sputtered and evaporated films are improved after annealing them at 200 °C. On the other hand, the Ta₂O₅ samples deposited at room temperature are always amorphous, independently of the technique used. The density and electrical performance are not so sensitive to the annealing process. The set of data obtained show that these dielectrics processed at temperatures below 200 °C present promising properties aiming to produce devices at low temperature with improved interface properties and reduced leakage currents.