Thermally stable, highly conductive, and transparent Ga-doped ZnO thin films |
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| Authors: | Byung Du Ahn Hong Seong Kang Sang Hoon Oh Gun-eik Jang |
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| Affiliation: | a Department of Electrical and Electronic Engineering, Yonsei University, 134, Shinchon-dong, Seodaemoon-ku, 120-749, Seoul, South Korea
b Department of Materials Science and Engineering Chungbuk National University, 12, Gaeshin-dong, Heungduk-gu, Cheongju-si, 361-763, Chungbuk, South Korea |
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| Abstract: | Highly conductive and transparent films of Ga-doped ZnO (GZO) have been prepared by pulsed laser deposition using a ZnO target with Ga2O3 dopant of 3 wt.% in content added. Films with resistivity as low as 3.3 × 10− 4 Ω cm and transmittance above 80% at the wavelength between 400 and 800 nm can be produced on glass substrate at room temperature. It is shown that a stable resistivity for use in oxidation ambient at high temperature can be attained for the films. The electrical and optical properties, as well as the thermal stability of resistivity, of GZO films were comparable to those of undoped ZnO films. |
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| Keywords: | Zinc oxide Gallium Electrical properties and measurements Structural properties Optical properties |
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