Noise canceling LNA with gain enhancement by using double feedback |
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| Affiliation: | 1. CTS-UNINOVA, Dep. Eng. Electrotécnica, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, 2825-149 Caparica, Portugal;2. INESC-ID Lisboa, R. Alves Redol 9, 1000-029 Lisboa, Portugal;1. Department of Electrical Engineering, University of Guilan, Rasht, Iran;2. Department of Electronics Engineering, Technical University of Catalunya, Barcelona, Spain;1. Department of Electronics and Communication Engineering, National Institute of Technology, Tiruchirappalli, India;2. Synopsys, Bangalore, India;1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;2. University of Chinese Academy of Sciences, Beijing 100039, China;3. Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai 201203, China;1. Department of Electronic Engineering, NED University of Engineering and Technology, Karachi 75270, Pakistan;2. Department of Computer and Information Systems Engineering, NED University of Engineering and Technology, Karachi 75270, Pakistan;3. Electrical Engineering Department, United Arab Emirates University, P.O. Box 15551, Al-Ain, United Arab Emirates;1. Department of Electrical and Computer Engineering, University of Mohaghegh Ardabili, Ardabil 56199-11367, Iran;2. Department of Computer Engineering, Tarbiat Modares University, Tehran, Iran |
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| Abstract: | In this paper we present a balun low noise amplifier (LNA) in which the gain is boosted by using a double feedback structure. The circuit is based on a conventional balun LNA with noise and distortion cancelation. The LNA is based on the combination of a common-gate (CG) stage and common-source (CS) stage. We propose to replace the load resistors by active loads, which can be used to implement local feedback loops (in the CG and CS stages). This will boost the gain and reduce the noise figure (NF). Simulation results, with a 130 nm CMOS technology, show that the gain is 24 dB and the NF is less than 2.7 dB. The total power dissipation is only 5.4 mW (since no extra blocks are required), leading to a figure-of-merit (FOM) of 3.8 mW?1 using a nominal 1.2 V supply. Measurement results are presented for the proposed DFB LNA included in a receiver front-end for biomedical applications (ISM and WMTS). |
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| Keywords: | RF front-end receivers CMOS LNAs Noise canceling Wideband LNA |
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