Electrical transport in light rare-earth vanadates |
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Authors: | Kanchan Gaur H B Lal |
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Affiliation: | (1) Department of Physics, University of Gorakhpur, 273001 Gorakhpur, India |
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Abstract: | This paper reports electrical transport studies of rare-earth vanadates (RVO4 with R = Ce, Pr, Nd, Sm, Eu and Gd), prepared by solid state reaction and characterized by X-ray diffraction studies. TGA
study (300 to 1200 K) shows no weight loss; possible phase transitions in the range 1075 to 1300 K have been indicated by
DTA studies. All these vanadates are typical semiconducting compounds with room temperature electrical conductivity (σ) lying
between 10−4 and 10−2Ω−1m−1. Measurements of σ and the Seebeck coefficient (S) are reported in the temperature interval 400 to 1200 K. Two linear regions 400 to T
1K and T
1 to T
2K have been obtained from the log σ against T
−1 as well as the S against T
−1 plots followed by a peak around T
3 and minima around T
4K. T
4>T
3>T
2>T
1, are different for different vanadates. It has been concluded that in the interval 400 to T
1K, conduction is of the extrinsic hopping type with Ce4+ in CeVO4, Pr4+ in PrVO4 and V4+ in Nd to Gd vanadates as dominant defect centres. In the temperature interval T
1, to T
2K, the conduction has been shown to be of the intrinsic band type in all vanadates with polarons of intermediate coupling
strength as the dominant charge carriers. Above T
2 all vanadates tend to become metallic, but before this is achieved the phase change makes the conductivity smaller. T
4 is close enough to the temperature corresponding to the DTA peak to be termed the phase transition temperature. |
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Keywords: | |
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