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GaAs power f.e.t.s with electron-beam-defined gates |
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| Authors: | Macksey HM Blocker TG Doerbeck FH |
| Affiliation: | Texas Instruments Incorporated, Dallas, USA; |
| Abstract: | The fabrication of GaAs power f.e.t.s having 1 ?m electron-beam-defined gates with 4800 ?m total gatewidth is described. The microwave performance at X-band is compared with that of conventionally defined devices having 2 ?m gate lengths. |
| Keywords: | |