GaAs power f.e.t.s with electron-beam-defined gates |
| |
Authors: | Macksey H.M. Blocker T.G. Doerbeck F.H. |
| |
Affiliation: | Texas Instruments Incorporated, Dallas, USA; |
| |
Abstract: | The fabrication of GaAs power f.e.t.s having 1 ?m electron-beam-defined gates with 4800 ?m total gatewidth is described. The microwave performance at X-band is compared with that of conventionally defined devices having 2 ?m gate lengths. |
| |
Keywords: | |
|
|