Preparation,characterization and electronic properties of fluorine-doped tin oxide films |
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| Authors: | G A Velázquez-Nevárez J R Vargas-García L Lartundo-Rojas Fei Chen Qiang Shen Lianmeng Zhang |
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| Affiliation: | 1.Deptartment of Materials and Metallurgical Engineering,National Polytechnic Institute,Mexico,Mexico;2.Nanosciences and Micro and Nanotechnology Center,National Polytechnic Institute,Mexico,Mexico;3.State Key Laboratory of Advanced Technology for Materials Synthesis and Processing,Wuhan University of Technology,Wuhan,China |
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| Abstract: | Tin oxide (SnO2) and fluorine doped tin oxide (FTO) films were prepared on glass substrates by sol-gel spin-coating using SnCl4 and NH4F precursors. Fluorine doping concentration was fixed at 4 at% and 20 at% by controlling precursor sol composition. Films exhibited the tetragonal rutile-type crystal structure regardless of fluorine concentration. Uniform and highly transparent FTO films, with more than 85% of optical transmittance, were obtained by annealing at 600 °C. Florine doping of films was verified by analyzing the valence band region obtained by XPS. It was found that the fluorine doping affects the shape of valence band of SnO2 films. In addition, it was observed that the band gap of SnO2 is reduced as well as the Fermi level is upward shifted by the effect of fluorine doping. |
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