| BJMOSFET 静态特性的解析模型及模拟分析 |
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| 引用本文： | 金湘亮,曾云,颜永红,成世明,龚磊,盛霞,樊卫. BJMOSFET 静态特性的解析模型及模拟分析[J]. 功能材料与器件学报, 2001, 7(2): 167-170,182 |
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| 作者姓名： | 金湘亮 曾云 颜永红 成世明 龚磊 盛霞 樊卫 |
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| 作者单位： | 1. 中国科学院微电子中心;湖南大学应用物理系
2. 湖南大学应用物理系 , |
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| 摘 要： | 建立了新型半导体功率器件－双极型压控晶体管（BJMOSFET）的直流解析模型，通过提取模型参数，运用电路模拟软件PSPICE的多瞬态分析法对BJMOSFET的直流特性进行了模拟，分析得出这种新型器件在相同结构参数和同等外界条件下与传统MOSFET相比，电流密度提高30％－40％。
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| 关 键 词： | BJMOSFET 静态特性 PSPICE 模拟分析 解析模型 |
| 文章编号： | 1007－4252(2001)02－0167－04 |
Simulation and analysis of static characteristics for BJMOSFET'S analytical |
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| JIN Xiang. Simulation and analysis of static characteristics for BJMOSFET'S analytical[J]. Journal of Functional Materials and Devices, 2001, 7(2): 167-170,182 |
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| Authors: | JIN Xiang |
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| Abstract: | The DC analytical model has been built for the bipolar voltage control transistor which is a novel semiconductor power device. Appling the multiple－ transient of the PSPICE software, the DC characteristically graphs of BJMOSFET has been simulated. The results show that the current density of BJMOSFET is 30～ 40％ larger than that of power MOSFET under the same operating conditions and structure parameters. |
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| Keywords: | BJMOSFET static characteristics PSPICE simulation |
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