QE、LBIC和I-V对铸造多晶硅、单晶硅太阳电池的表征 |
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引用本文: | 周春兰,王文静,李海玲,赵雷. QE、LBIC和I-V对铸造多晶硅、单晶硅太阳电池的表征[J]. 光学精密工程, 2008, 16(7): 1163-1170 |
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作者姓名: | 周春兰 王文静 李海玲 赵雷 |
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作者单位: | 中国科学院电工研究所 |
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基金项目: | 国家863研究发展计划资助项目(No.2006AA05Z405;No.2006AA04Z345) |
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摘 要: | 分析了三种不同类型的商业太阳电池片-P 型铸造多晶硅太阳电池,定边喂膜生长硅(EFG)太阳电池和单晶硅太阳电池的光谱响应(外量子效率EQE),光束诱导电流(LBIC)和暗电流-电压(I-V),光照I-V曲线。在I-V 特性测试中,利用太阳电池的二极管等效模型从测量数据中得出重要的电池参数,例如串联电阻,并联电阻,二极管理想因子,暗饱和电流等。通过光谱响应和LBIC 测试,分析影响这些参数的可能性缺陷。在铸造多晶硅、EGF 太阳电池中影响电池参数的主要缺陷是晶界以及位错以及材料中杂质,而对于单晶硅来说,主要的却是存在于体内的金属杂质等。
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关 键 词: | 晶体硅 太阳电池效率 光谱响应 光束诱导电流 电流-电压 缺陷 |
收稿时间: | 2007-11-13 |
修稿时间: | 2008-01-07 |
Characterization of crystalline silicon solar cells by electrical parameters |
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Abstract: | Three types of industrial silicon solar cells: P-type of cast-multicrystlline silicon,edge-defined film-fed growth (EFG) and single silicon solar cells have been analyzed, usingspectral response (external quantum efficiency, EQE), light beam induced current (LBIC) and darkand illuminated current-voltage measurement (I-V). The diode equivalent model solar cells allowsto deduce, from measured data, important cell parameters such as the ideality factors of diodes n,the saturation currents I0 and the parasitic resistance RS and RSH. The type of extended defect arediscussed which effect these cells parameters in terms of the result of EQE and LBIC. Forcast-multicrystlline silicon and EFG solar cells, the grain boundaries, dislocation and impurity inbulk silicon can be accounted for the degradation of cell parameter, but for single silicon solarcells maybe born-oxygen defect pairs. |
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Keywords: | silicon solar cell efficiency QE LBIC I-V defect |
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