High-speed planar-structure Inp/InGaAsP/InGaAs avalanche photodiode grown by VPE |
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| Authors: | Sugimoto Y. Torikai T. Makita K. Ishihara H. Minemura K. Taguchi K. Iwakami T. |
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| Affiliation: | NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan; |
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| Abstract: | Planar-structure InP/InGaAsP/InGaAs avalanche photo-diodes have been realised by using a VPE-growth technique and a Be+ implanted guard ring. Sensitivity measurement has been performed at 1.3 ?m and 1.8 Gbit/s. The minimum average received level required for 10?9 BER was ?31.3 dBm, which was 1.2 dB better than the value for the Ge-APD. |
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