Interfacial layer in homoepitaxial InP grown by organometallic vapor phase epitaxy with TMIn and TBP |
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Authors: | Hiroyasu Nakata Kazuo Satoh Tyuzi Ohyama Yasufumi Fujiwara Youichi Nonogaki Yoshikazu Takeda |
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Affiliation: | (1) Department of Physics, Graduate School of Science, Osaka University, 1-16 Machikaneyama-cho, 560 Toyonaka, Japan;(2) Department of Materials Science and Engineering, School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, 464-01 Nagoya, Japan |
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Abstract: | The effects of interfacial layers with high impurity concentration on the properties of homoepitaxial InP layers have been
studied by far-infrared (FIR) magnetoabsorption, in addition to dc mobility, Hall effect, and photoluminescence (PL) measurements.
The layers are grown by organometallic vapor phase epitaxy with trimethylindium and tertiarybutylphosphine. Impurity absorption
as well as cyclotron resonance is observed in the FIR measurements. Variations in the intensity of the resonance signals and
the mobilities obtained from the linewidths of the cyclotron resonance are interpreted by a double layer model, i.e. a bulk
layer with an interfacial layer. Carrier concentrations, dc mobilities, and PL intensities of both bound excitons and free
excitons are also explained by the model. |
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Keywords: | Far-infrared InP interfacial layer photoluminescence |
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